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| 2SJ380 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ380 Relay Drive, DC-DC Converter and Motor Drive Applications * * * * * 4-V gate drive Low drain-source ON resistance: RDS (ON) = 0.15 (typ.) High forward transfer admittance: |Yfs| = 7.7 S (typ.) Low leakage current: IDSS = -100 A (max) (VDS = -100 V) Enhancement mode: Vth = -0.8~-2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating -100 -100 20 -12 -48 35 312 -12 3.5 150 -55~150 Unit V V V A W mJ A mJ C C Pulse (Note 1) Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-67 2-10R1B Weight: 1.9 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.57 62.5 Unit C/W C/W Note1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = -25 V, Tch = 25C (initial), L = 2.94 mH, RG = 25 , IAR = -12 A Note 3: Repetitive rating: pulse width limited by maximum junction temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2007-02-01 2SJ380 Electrical Characteristics (Tc = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr VGS -10 V 50 0V VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -100 V, VGS = 0 V ID = -10 mA, VGS = 0 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -6 A VGS = -10 V, ID = -6 A VDS = -10 V, ID = -6 A Min -100 -0.8 4.5 VOUT 30 ns 18 Typ. 0.25 0.15 7.7 1100 200 440 18 Max 10 -100 -2.0 0.32 0.21 Unit A A V V S pF pF pF ID = -6 A RL = 8.3 Turn-on time Switching time Fall time ton tf VDD -50 V - Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge toff Duty < 1%, tw = 10 s = 65 Qg Qgs Qgd VDD -80 V, VGS = -10 V, - ID = -12 A 48 29 19 nC nC nC Source-Drain Ratings and Characteristics (Tc = 25C) Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR Test Condition Min Typ. Max -12 Unit A IDRP VDSF trr Qrr IDR = -12 A, VGS = 0 V IDR = -12 A, VGS = 0 V dIDR/dt = 50 A/s 160 0.5 -48 1.7 A V ns C Marking J380 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2007-02-01 2SJ380 ID - VDS -5 Common source Tc = 25C Pulse test -10 -6 -20 -4 -8 -3 -16 Common source Tc = 25C Pulse test ID - VDS -8 -6 -4 -12 -10 -3.5 -8 -3 -4 VGS = -2 V -2.5 VGS = -2 V -4 Drain current ID (A) -3 -2.5 -2 -1 0 0 Drain Current ID -2.0 (A) -1.2 -1.6 0 0 -0.4 -0.8 -2 -4 -6 -8 -10 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -10 Common source VDS = -10 V Pulse test 25 Tc = -55C -6 100 -3.2 VDS - VGS Common source Tc = 25C Pulse test -2.4 -8 Drain current ID (A) Drain-source voltage VDS (V) -1.6 ID = -8 A -4 -2 -0.8 -4 -2 0 0 -1 -2 -3 -4 -5 -6 0 0 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) Yfs - ID (S) 30 Common source VDS = -10 V Pulse test 10 2.0 1.0 0.5 0.3 Common source Tc = 25C Pulse test RDS (ON) - ID Forward transfer admittance Yfs Tc = -55C Drain-source ON resistance RDS (ON) () 5 3 100 25 VGS = -4 V -10 0.1 0.05 1 -0.3 -1.0 -3 -10 -20 0.03 -0.1 -0.3 -1.0 -3 -10 -20 Drain current ID (A) Drain current ID (A) 3 2007-02-01 2SJ380 RDS (ON) - Tc () 0.5 Common source Pulse test 0.4 -4 -30 Common source Tc = 25C IDR - VDS Drain-source ON resistance RDS (ON) (A) ID = -8 A -8 -10 -5 -3 Pulse test 0.3 -2, -4 0.2 VGS = -4 V -2 Drain reverse current IDR VGS = -10 V -3 -1 -0.5 -5 -1 0.2 0.4 -2 0.1 VGS = -10 V 0 -80 0, 1 0.6 0.8 1.0 -40 0 40 80 120 160 -0.3 0 Case temperature Tc (C) Drain-source voltage VDS (V) Capacitance - VDS 5000 3000 -4 Vth - Tc Common source VDS = -10 V ID = -1 mA Pulse test 1000 500 300 Common source 100 VGS = 0 V 50 f = 1 MHz Tc = 25C -0.3 -1 -3 -10 Ciss Vth (V) Gate threshold voltage -100 (pF) -3 Capacitance C Coss -2 Crss -1 30 -0.1 -30 Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 Case temperature Tc (C) PD - Tc 40 -100 Dynamic Input/Output Characteristics Common source ID = -12 A Tc = 25C Pulse test -20 Drain power dissipation PD (W) VDS (V) -80 -16 30 Drain-source voltage 20 -20 V -40 -40 V -8 10 -20 VGS 0 0 -4 0 0 40 80 120 160 20 40 60 80 0 100 Case temperature Tc (C) Total gate charge Qg (nC) 4 2007-02-01 Gate-source voltage -60 VDS VDD = -80 V -12 VGS (V) 2SJ380 rth - tw 3 Normalized transient thermal impedance rth (t)/Rth (ch-c) 1 0.5 0.3 Duty = 0.5 0.2 0.1 0.1 0.05 0.03 0.05 0.02 0.01 Single pulse 0.01 0.005 0.003 10 100 1m 10 m 100 m PDM t T Duty = t/T Rth (ch-c) = 3.57C/W 1 10 Pulse width tw (s) Safe Operating Area -100 -50 -30 ID max (continuous) IC max (pulsed)* 100 s* 1 ms* 10 ms* 500 EAS - Tch Avalanche energy EAS (mJ) 400 300 Drain current ID (A) -10 -5 -3 DC operation Tc = 25C -1 -0.5 -0.3 200 100 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0 25 50 75 100 125 150 Channel temperature (initial) Tch (C) VDSS max -30 -100 -300 -0.1 -1 -3 -10 Drain-source voltage VDS (V) 15 V -15 V BVDSS IAR VDD VDS Test circuit RG = 25 VDD = -25 V, L = 2.94 mH Wave form 1 2 B VDSS AS = *L*I * B 2 - VDD VDSS 5 2007-02-01 2SJ380 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 20070701-EN * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-02-01 |
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